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| UTC PCR406 DESCRIPTION The UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. SCR 1 TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS PARAMETERS Repetitive Peak Off-State Voltage PCR406-6 PCR406-5 On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature SYMBOL VDRM TEST CONDITION Tj=40 to 125C (RGK =1k) Tc=40C Half Cycle=180, Tc=40C IGR=10uA 10us Max. 20ms Max. RATING 400 300 0.8 0.5 1 0.1 150 -40~125 -40~125 250 UNITS V A A V A mW C C C IT(RMS) IT(AV) VGRM IGM PG(AV) Tj TSTG TSLD 1.6mm from case 10s Max. ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Off state leakage current Off state leakage current On state voltage On state threshold voltage On state slops resistance Gate trigger current Gate trigger voltage Holding current Latching current Critical rate of voltage rise SYMBOL IDRM IDRM TEST CONDITIONS VDRM(RGK=1K), Tj=125C VDRM(RGK=1K), Tj=25C IT=0.4A IT=0.8A Tj=125C Tj=125C VD=7V VD=7V RGK=1K RGK=1K VD=0.67*VDRM(RGK=1K), Tj=125C MIN MAX 0.1 1.0 1. 4 2.2 0.95 600 200 0.8 5 6 UNIT mA A V V m A V mA mA V/s VT VT(TO) Rt IGT VGT IH IL DV/DT UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R301-010,A UTC PCR406 PARAMETER Critical rate of current rise Gate controlled delay time Commutated turn-off time SCR SYMBOL DV/DT TGD TG TEST CONDITIONS IG=10mA, dIG/dt=0.1A/s, Tj=125C IG=10mA, dIG/dt=0.1A/s, Tj=85C, VD=0.67*VDRM, VR=35V, IT=IT(AV) MIN MAX UNIT A/s 2.2 200 s s CLASSIFICATION OF IGT RANK RANGE B 50-100A C 100-200A AA 8-15A AB 15-20A AC 20-25A AD 25-50A UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R301-010,A |
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